I-ABB 5SHY4045L0001 3BHB018162 Inverter Board IGCT Abahlinzeki Bemojula Engcono Kakhulu Nenkampani

I-ABB 5SHY4045L0001 3BHB018162 I-Inverter Board IGCT module

incazelo emfushane:

Inombolo yomthetho: ABB 5SHY4045L0001 3BHB018162

Igama lomkhiqizo: ABB

intengo: $15000

Isikhathi sokulethwa: Esitokweni

Inkokhelo: T/T

ichweba lokuthumela: xiamen

Thumela i-imeyili kithi

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Incazelo

Ukukhiqiza	I-ABB
Imodeli	5SHY4045L0001
Ulwazi loku-oda	3BHB018162
Ikhathalogi	I-VFD Spares
Incazelo	I-ABB 5SHY4045L0001 3BHB018162 I-Inverter Board IGCT module
Umsuka	I-United States (US)
Ikhodi ye-HS	85389091
Ubukhulu	16cm16cm12cm
Isisindo	0.8kg

Imininingwane

I-5SHY4045L0001 3BHB018162R0001 iwumkhiqizo ohlanganisiwe wesango oshintshwayo we-thyristor (IGCT) we-ABB, oyingxenye yochungechunge lwe-5SHY.

I-IGCT wuhlobo olusha lwesisetshenziswa kagesi esavela ngasekupheleni kwawo-1990.

Ihlanganisa izinzuzo ze-IGBT (insulated gate bipolar transistor) kanye ne-GTO (isango lokuvala i-thyristor), futhi inezici zejubane lokushintsha ngokushesha, umthamo omkhulu, namandla amakhulu okushayela adingekayo.

Ngokukhethekile, umthamo we-5SHY4045L0001 3BHB018162R0001 ulingana nowe-GTO, kodwa ijubane layo lokushintsha liphindwe izikhathi ezingu-10 kunele-GTO, okusho ukuthi ingaqeda isenzo sokushintsha ngesikhathi esifushane futhi ngaleyo ndlela ithuthukise ukusebenza kahle kokuguqulwa kwamandla.

Ngaphezu kwalokho, uma kuqhathaniswa ne-GTO, i-IGCT ingasindisa isekethe enkulu futhi eyinkimbinkimbi ye-snubber, esiza ukwenza lula ukwakheka kohlelo nokunciphisa izindleko.

Nokho, kufanele kuqashelwe ukuthi nakuba i-IGCT inezinzuzo eziningi, amandla okushayela adingekayo asemakhulu.

Lokhu kungase kwenyuse ukusetshenziswa kwamandla nokuba yinkimbinkimbi kwesistimu. Ngaphezu kwalokho, nakuba i-IGCT izama ukufaka esikhundleni i-GTO ezinhlelweni zamandla aphezulu, isabhekene nokuncintisana okuqinile kwamanye amadivaysi amasha (afana ne-IGBT)

5SHY4045L00013BHB018162R0001 Isango elihlanganisiwe elishintshiwe ama-transistors|GCT (I-Intergrated Gate commutated transistors) iyisisetshenziswa esisha sesemiconductor yamandla esetshenziswa kumpahla kagesi enamandla amakhulu eyaphuma ngo-1996.

I-IGCT iyithuluzi elisha lokushintsha i-semiconductor enamandla amakhulu elisekelwe esakhiweni se-GTO, lisebenzisa isakhiwo sesango elihlanganisiwe le-hard drive yesango, lisebenzisa isakhiwo se-buffer middle layer kanye nobuchwepheshe be-anode transparent emitter, enezici ze-on-state ze-thyristor nezici zokushintsha ze-transistor.

5SHY4045L000) 3BHBO18162R0001 isebenzisa isakhiwo sebhafa kanye nobuchwepheshe be-emitter obungajulile, obunciphisa ukulahlekelwa okuguquguqukayo cishe ngo-50%.

Ngaphezu kwalokho, lolu hlobo lwemishini futhi luhlanganisa i-freewheeling diode enezici ezinhle eziguquguqukayo ku-chip, bese ibona inhlanganisela yezinto eziphilayo zokwehla kwe-voltage esezingeni eliphansi, i-voltage ephezulu yokuvimba kanye nezici zokushintsha ezizinzile ze-thyristor ngendlela eyingqayizivele.